BSR202N OptiMOS®2 Small-Signal-Transistor Product Summary Features V 20 V DS • N-channel R V =4.5 V 21 mΩ DS(on),max GS • Enhancement mode V =2.5 V 33 GS • Super Logic level (2.5V rated) I 3.8 A D • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv/dt rated • Pb-free lead plating; RoHS compliant 3 • Qualified according to AEC Q101 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSR202N PG-SC-59 L6327 = 3000 pcs. / reel LAs Yes Non dry Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C 3.8 A D A T =70 °C 3.1 A Pulsed drain current I T =25 °C 15.2 D,pulse A Avalanche energy, single pulse E I =3.8 A, R =25 Ω 30 mJ AS D GS I =3.8 A, V =16 V, D DS Reverse diode dv/dt dv/dt di/dt=200 A/µs, 6 kV/µs T =150 °C j,max Gate source voltage V ±12 V GS Power dissipation P T =25 °C 0.5 W tot A Operating and storage temperature T , T -55 ... 150 °C j stg ESD Class JESD22-A114-HBM 0 (0V to 250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 RReevv.. 11..0099 ppaaggee 11 22001122--0077--3311

BSR202N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W junction - minimal footprint thJA Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0 V, I = 250 µA 20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =30 µA 0.7 0.95 1.2 GS(th) DS GS D V =20 V, V =0 V, Drain-source leakage current I DS GS - - 1 μA DSS T =25 °C j V =20 V, V =0 V, DS GS - - 100 T =150 °C j Gate-source leakage current I V =12 V, V =0 V - - 100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =3 A - 25 33 mΩ DS(on) GS D V =4.5 V, I =3.8 A - 17 21 GS D |V |>2|I |R , Transconductance g DS D DS(on)max 17 - S fs I =3.8 A D RReevv.. 11..0099 ppaaggee 22 22001122--0077--3311

BSR202N Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 863 1147 pF iss V =0 V, V =10 V, Output capacitance C GS DS - 278 370 oss f=1 MHz Reverse transfer capacitance C - 40 60 rss Turn-on delay time t - 8.8 - ns d(on) Rise time tr V =10 V, V =4.5 V, - 16.7 - DD GS I =3.8 A, R =6 Ω Turn-off delay time t D G - 19 - d(off) Fall time t - 3.7 - f Gate Charge Characteristics Gate to source charge Q - 1.66 2.21 nC gs Gate to drain charge Qgd V =10 V, I =3.8 A, - 1.1 1.6 DD D V =0 to 4.5 V Gate charge total Q GS - 5.8 8.8 g Gate plateau voltage V - 1.9 - V plateau Reverse Diode Diode continous forward current I - - 0.8 A S T =25 °C A Diode pulse current I - - 15.2 S,pulse V =0 V, I =3.8 A, Diode forward voltage V GS F - 0.8 1.1 V SD T =25 °C j Reverse recovery time trr V =10 V, I =3.8 A, - 14.3 ns R F di /dt=100 A/µs Reverse recovery charge Q F - 7.6 - nC rr RReevv.. 11..0099 ppaaggee 33 22001122--0077--3311

BSR202N 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); V ≥4.5 V tot A D A GS 00..66 44 00..55 33 00..44 P[W]P[W]tottot 00..33 I[A]I[A]DD 22 00..22 11 00..11 00 00 00 4400 8800 112200 116600 00 4400 8800 112200 116600 TT [[°°CC]] TT [[°°CC]] AA AA 3 Safe opperatingg area 4 Max. transient thermal imppedance I =f(V ); T =25 °C; D=0 Z =f(t ) D DS A thJA p parameter: t parameter: D=t /T p p 102 103 limited by on-state resistance 10 µs 101 0.5 1 ms 100 µs 102 0.2 0.1 100 10 ms W] 0.05 A] K/ 101 [D [A 0.02 I J h 10-1 Zt 0.01 DC 100 single pulse 10-2 10-3 10-1 10-2 10-1 100 101 102 10-4 10-3 10-2 10-1 100 101 V [V] t [s] DS p RReevv.. 11..0099 ppaaggee 44 22001122--0077--3311

BSR202N 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T =25 °C R =f(I ); T =25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 1166 6600 44..55 VV 22..22 VV 33 VV 11..88 VV 22 VV 1144 22..55 VV 5500 22..44 VV 1122 4400 1100 22..22 VV ]] ΩΩ mm A]A] 88 [[ 3300 [[ n)n) DD oo II DS(DS( 22..55 VV RR 66 33 VV 2200 22 VV 33..55 VV 44..55 VV 44 66 VV 1100 22 11..88 VV 11..66 VV 00 00 00 11 22 33 00 44 88 1122 1166 VV [[VV]] II [[AA]] DDSS DD 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T =25 °C D GS DS D DS(on)max fs D j 8 20 7 6 15 5 25 °C A] S] I[D 4 150 °C g[fs 10 3 2 5 1 0 0 0 1 2 3 0 1 2 3 4 V [V] I [A] GS D RReevv.. 11..0099 ppaaggee 55 22001122--0077--3311

BSR202N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T ); I =3.8 A; V =4.5 V V =f(T ); V =V ; I =30 µA DS(on) j D GS GS(th) j DS GS D parameter: I D 4400 11..66 3300 11..22 9988 %% ]]ΩΩ 9988 %% ttyypp mm V]V] [[ [[ n)n) 2200 h)h) 00..88 RRDS(oDS(o ttyypp VVGS(tGS(t 22 %% 1100 00..44 00 00 --6600 --2200 2200 6600 110000 114400 --6600 --2200 2200 6600 110000 114400 TT [[°°CC]] TT [[°°CC]] jj jj 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz; T=25°C I =f(V ) DS GS j F SD parameter: T j 102 104 101 103 Ciss 100 ] pF Coss A] [ [F C I 25 °C 10-1 102 150 °C, 98% 150 °C Crss 25 °C, 98% 10-2 101 10-3 0 5 10 15 20 0 0.4 0.8 1.2 1.6 V [V] DS V [V] SD RReevv.. 11..0099 ppaaggee 66 22001122--0077--3311

BSR202N 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 Ω V =f(Q ); I =3.8 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 110011 1100 99 2255 °°CC 88 110000 °°CC 77 110000 1166 VV 66 1100 VV A]A] 112255 °°CC V]V] [[ [[ 55 IIAVAV VVGSGS 44 VV 44 1100--11 110000 110011 110022 110033 33 22 11 00 00 22 44 66 88 1100 1122 1144 tt [[µµss]] QQ [[nnCC]] AAVV ggaattee 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T ); I =250 µA BR(DSS) j D 25 V GS 24 Q g 23 22 V] 21 [ S) S D R( 20 VB Vgs(th) 19 18 17 Qg(th) Qsw Qgate Q Q 16 gs gd -60 -20 20 60 100 140 T [°C] j RReevv.. 11..0099 ppaaggee 77 22001122--0077--3311

BSR202N Package Outline: PG-SC59 1.1±0.1 3±0.1 0.15 MAX. 0.1 3x0.4 +0.05 +0.1 0.2 -0.1 0.1 M 3 5 1 5 +0.2-0.1 5±0. +0.1-0.3 8 4 6 2. 0. 1. 1 2 0.95 0.15+0.1 -0.05 0.95 M 1 . 0 (0.55) 0˚...8˚ MAX. GPS09473 Footprint: 00..88 9 . 0 3 . 1 9 . 0 1.2 HLG09474 Dimensions in mm RReevv.. 11..0099 ppaaggee 88 22001122--0077--3311

BSR202N Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user RReevv.. 11..0099 ppaaggee 99 22001122--0077--3311

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: BSR202N L6327